Mechanisms of silicon damage during N 2...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2015 / 09 Vol. 33; Iss. 5

Mechanisms of silicon damage during N 2 /H 2 organic etching for fin field-effect-transistor CMOS

Morimoto, Tamotsu, Ohtake, Hiroto, Wanifuchi, Tomiko
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Volume:
33
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4930244
Date:
September, 2015
File:
PDF, 1.18 MB
english, 2015
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