Deep level traps in GaN LEDs grown by metal organic vapour...

Japanese Journal of Applied Physics 2016 / 06 Vol. 55; Iss. 6

Deep level traps in GaN LEDs grown by metal organic vapour phase epitaxy on an 8 inch Si(111) substrate

Nguyen, Xuan Sang, Goh, Xuan Long, Zhang, Li, Zhang, Zeng, Arehart, Aaron R., Ringel, Steven A., Fitzgerald, Eugene A., Chua, Soo Jin
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Volume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.060306
Date:
June, 2016
File:
PDF, 1.13 MB
english, 2016
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