Dynamic through-silicon-via filling process using copper...

Dynamic through-silicon-via filling process using copper electrochemical deposition at different current densities

Wang, Fuliang, Zhao, Zhipeng, Nie, Nantian, Wang, Feng, Zhu, Wenhui
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Volume:
7
Language:
english
Journal:
Scientific Reports
DOI:
10.1038/srep46639
Date:
April, 2017
File:
PDF, 1.51 MB
english, 2017
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