Investigation of Graphene Field Effect Transistors with Al...

Japanese Journal of Applied Physics 2011 / 7 Vol. 50; Iss. 7

Investigation of Graphene Field Effect Transistors with Al 2 O 3 Gate Dielectrics Formed by Metal Oxidation

Jung, Myung-Ho, Handa, Hiroyuki, Takahashi, Ryota, Fukidome, Hirokazu, Suemitsu, Tetsuya, Otsuji, Taiichi, Suemitsu, Maki
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Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.070111
Date:
July, 2011
File:
PDF, 730 KB
english, 2011
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