Controlling the threshold voltage of SnO 2 nanowire transistors with dual in-plane-gate structures gated by chitosan proton conductors
Liu, Huixuan, Tan, RongriVolume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.055201
Date:
May, 2017
File:
PDF, 658 KB
english, 2017