![](/img/cover-not-exists.png)
Resistance switching memory characteristics of CaF 2 /Si/CaF 2 resonant-tunneling quantum-well heterostructures sandwiched by nanocrystalline Si secondary barrier layers
Kuwata, Yuya, Suda, Keita, Watanabe, MasahiroVolume:
9
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.9.074001
Date:
July, 2016
File:
PDF, 850 KB
english, 2016