Gated photodetector based on GaN/AlGaN heterostructure...

Electronics Letters 1995 / 03 Vol. 31; Iss. 5

Gated photodetector based on GaN/AlGaN heterostructure field effect transistor

Chen, Q., Kuznia, J.N., Sun, C.J., Khan, M.A., Shur, M.S.
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Volume:
31
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19950247
Date:
March, 1995
File:
PDF, 331 KB
english, 1995
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