AIP Conference Proceedings [AIP PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors - Rio de Janeiro (Brazil) (27 July–1 August 2009)] - Optical Properties Of Metastable Shallow Acceptors In Mg-Doped GaN Layers Grown By Metal-Organic Vapor Phase Epitaxy
Pozina, G., Hemmingsson, C., Bergman, J. P., Kawashima, T., Amano, H., Akasaki, I., Usui, A., Monemar, B., Caldas, Marília, Studart, NelsonYear:
2010
Language:
english
DOI:
10.1063/1.3295320
File:
PDF, 168 KB
english, 2010