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DC and Microwave Characteristics of Lg 50nm T-Gate InAlN/AlN/GaN HEMT for Future High Power RF Applications
Murugapandiyan, P., Ravimaran, S., William, J.Language:
english
Journal:
AEU - International Journal of Electronics and Communications
DOI:
10.1016/j.aeue.2017.05.004
Date:
May, 2017
File:
PDF, 764 KB
english, 2017