Performance Enhancement of 22nm SRAM using Gate Engineered...

Performance Enhancement of 22nm SRAM using Gate Engineered Multigate Independent FETs

Nesamani, I. Flavia Princess, Manikandan, M., Lakshmi Prabha, V., Antony, Ninu, Mathew, Juna
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Volume:
4
Year:
2017
Language:
english
Journal:
Materials Today: Proceedings
DOI:
10.1016/j.matpr.2017.02.128
File:
PDF, 533 KB
english, 2017
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