Electrical properties of RF-sputtered Zn-doped GaN films and p -Zn-GaN/ n -Si hetero junction diode with low leakage current of 10 −9 A and a high rectification ratio above 10 5

The file will be sent to you via the Telegram messenger. It may take up to 1-5 minutes before you receive it.

Note: Make sure you have linked your account to Z-Library Telegram bot.

The file will be sent to your Kindle account. It may take up to 1–5 minutes before you receive it.

Please note: you need to verify every book you want to send to your Kindle. Check your mailbox for the verification email from Amazon Kindle.