Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design
Wu, Feng, Sun, Haiding, Ajia, Idris, Roqan, Iman, Zhang, Daliang, Dai, Jiangnan, Chen, Changqing, Feng, Zhe Chuan, Li, XiaohangLanguage:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/1361-6463/aa70dd
Date:
May, 2017
File:
PDF, 1.01 MB
english, 2017