![](/img/cover-not-exists.png)
Characterization of SiGe Layer during Ge Condensation Process by X-ray Diffraction Methods
Shimura, Takayoshi, Inoue, Tomoyuki, Shimokawa, Daisuke, Hosoi, Takuji, Imai, Yasuhiko, Sakata, Osami, Kimura, Shigeru, Watanabe, HeijiVolume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.010112
Date:
January, 2011
File:
PDF, 2.66 MB
english, 2011