Formation of silicon nanocrystals in Si—SiO2—α-Si—SiO2heterostructures during high-temperature annealing: Experiment and simulation
Neizvestny, I. G., Volodin, V. A., Kamaev, G. N., Cherkova, S. G., Usenkov, S. V., Shwartz, N. L.Volume:
52
Language:
english
Journal:
Optoelectronics, Instrumentation and Data Processing
DOI:
10.3103/S8756699016050101
Date:
September, 2016
File:
PDF, 1.43 MB
english, 2016