Measurement and modeling of gate–drain capacitance of...

Japanese Journal of Applied Physics 2017 / 04 Vol. 56; Iss. 4S

Measurement and modeling of gate–drain capacitance of silicon carbide vertical double-diffused MOSFET

Shintani, Michihiro, Nakamura, Yohei, Hiromoto, Masayuki, Hikihara, Takashi, Sato, Takashi
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Volume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.04CR07
Date:
April, 2017
File:
PDF, 1.25 MB
english, 2017
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