Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2015 / 09 Vol. 33; Iss. 5
Device characteristics comparisons for the InGaZnO thin film transistors fabricated on two-type surfaces of the plastic poly(ethylene naphthalate) substrates with hybrid barrier layers
Park, Min-Ji, Yun, Da-Jeong, Ryu, Min-Ki, Yang, Jong-Heon, Pi, Jae-Eun, Kwon, Oh-Sang, Kim, Gi Heon, Hwang, Chi-Sun, Yoon, Sung-MinVolume:
33
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4929414
Date:
September, 2015
File:
PDF, 5.53 MB
english, 2015