[IEEE 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)] - Toyama, Japan (2016.6.26-2016.6.30)] 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) - Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN schottky barrier diodes with gated edge termination
Hu, Jie, Stoffels, Steve, Lenci, Silvia, Ronchi, Nicolo, De Jaeger, Brice, You, Shuzhen, Bakeroot, Benoit, Groeseneken, Guido, Decoutere, StefaanYear:
2016
Language:
english
DOI:
10.1109/iciprm.2016.7528735
File:
PDF, 19 KB
english, 2016