Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates
Wang, Haiyan, Wang, Wenliang, Yang, Weijia, Zhu, Yunnong, Lin, Zhiting, Li, GuoqiangVolume:
52
Language:
english
Journal:
Journal of Materials Science
DOI:
10.1007/s10853-016-0427-1
Date:
February, 2017
File:
PDF, 2.24 MB
english, 2017