Diode laser annealing of epitaxy Ge on sapphire (0 0 0...

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Materials Letters 2017 / 5

Diode laser annealing of epitaxy Ge on sapphire (0 0 0 1) grown by magnetron sputtering

Liu, Ziheng, Hao, Xiaojing, Huang, Jialiang, Ho-Baillie, Anita, Varlamov, Sergey, Green, Martin A.
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Language:
english
Journal:
Materials Letters
DOI:
10.1016/j.matlet.2017.05.043
Date:
May, 2017
File:
PDF, 1.18 MB
english, 2017
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