![](/img/cover-not-exists.png)
Effects of ultra-shallow ion implantation from RF plasma onto electrical properties of 4H-SiC MIS structures with SiO x /HfO x and SiO x N y /HfO x double-gate dielectric stacks
Mroczyński, Robert, Kwietniewski, Norbert, Konarski, PiotrVolume:
178
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2017.05.017
Date:
June, 2017
File:
PDF, 1.22 MB
english, 2017