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Effects of negative bias stress on trapping properties of AlGaN/GaN Schottky barrier diodes
Ferrandis, Philippe, Charles, Matthew, Gillot, Charlotte, Escoffier, René, Morvan, Erwan, Torres, Alphonse, Reimbold, GillesVolume:
178
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2017.05.022
Date:
June, 2017
File:
PDF, 942 KB
english, 2017