High-Quality and Strain-Relaxation GaN Epilayer Grown on SiC Substrates Using AlN Buffer and AlGaN Interlayer
Liu, Bo-Ting, Guo, Shi-Kuan, Ma, Ping, Wang, Jun-Xi, Li, Jin-MinVolume:
34
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/34/4/048101
Date:
March, 2017
File:
PDF, 2.02 MB
english, 2017