Fully tensile strained partial silicon-on-insulator n-type...

AIP Advances 2017 / 05 Vol. 7; Iss. 5

Fully tensile strained partial silicon-on-insulator n-type lateral-double-diffused metal-oxide-semiconductor field effect transistor using localized contact etching stop layers

Wang, Xiangzhan, Tan, Changgui, Zou, Xi, Zhang, Yi, Pan, Jianhua, Liu, Yang
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Volume:
7
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4983214
Date:
May, 2017
File:
PDF, 1.84 MB
english, 2017
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