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Modeling of light-induced degradation due to Cu precipitation in p-type silicon. II. Comparison of simulations and experiments
Vahlman, H., Haarahiltunen, A., Kwapil, W., Schön, J., Inglese, A., Savin, H.Volume:
121
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4983455
Date:
May, 2017
File:
PDF, 2.18 MB
english, 2017