![](/img/cover-not-exists.png)
Impact of Nitrogen Incorporation on the Interface Between Ge and La 2 O 3 or Y 2 O 3 Gate Dielectric: A Study on the Formation of Germanate
Cheng, Zhi-Xiang, Liu, Lu, Xu, Jing-Ping, Huang, Yong, Lai, Pui-To, Tang, Wing-ManVolume:
63
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2016.2618221
Date:
December, 2016
File:
PDF, 1003 KB
english, 2016