Real-time temperature monitoring of Si substrate during plasma processing and its heat-flux analysis
Tsutsumi, Takayoshi, Ishikawa, Kenji, Takeda, Keigo, Kondo, Hiroki, Ohta, Takayuki, Ito, Masafumi, Sekine, Makoto, Hori, MasaruVolume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.01AB04
Date:
January, 2016
File:
PDF, 609 KB
english, 2016