Tailoring the 4H-SiC/SiO 2...

Japanese Journal of Applied Physics 2016 / 08 Vol. 55; Iss. 8S2

Tailoring the 4H-SiC/SiO 2 MOS-interface for SiC-based power switches

Mikhaylov, Aleksey I., Afanasyev, Alexey V., Luchinin, Victor V., Reshanov, Sergey A., Schöner, Adolf, Knoll, Lars, Minamisawa, Renato A., Alfieri, Giovanni, Bartolf, Holger
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Volume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.08PC04
Date:
August, 2016
File:
PDF, 1.91 MB
english, 2016
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