Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions
Sobolev, N. A., Kalyadin, A. E., Aruev, P. N., Zabrodskii, V. V., Shek, E. I., Shtel’makh, K. F., Karabeshkin, K. V.Volume:
58
Language:
english
Journal:
Physics of the Solid State
DOI:
10.1134/S1063783416120283
Date:
December, 2016
File:
PDF, 282 KB
english, 2016