Atomic layer etching of silicon nitride using infrared...

Japanese Journal of Applied Physics 2017 / 06 Vol. 56; Iss. 6S2

Atomic layer etching of silicon nitride using infrared annealing for short desorption time of ammonium fluorosilicate

Miyoshi, Nobuya, Kobayashi, Hiroyuki, Shinoda, Kazunori, Kurihara, Masaru, Watanabe, Tomoyuki, Kouzuma, Yutaka, Yokogawa, Kenetsu, Sakai, Satoshi, Izawa, Masaru
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Volume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.06HB01
Date:
June, 2017
File:
PDF, 1.74 MB
english, 2017
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