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Admittance–voltage profiling of Al x Ga 1−x N/GaN heterostructures: Frequency dependence of capacitance and conductance
Köhler, K., Pletschen, W., Godejohann, B., Müller, S., Menner, H. P., Ambacher, O.Volume:
118
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4936125
Date:
November, 2015
File:
PDF, 1.62 MB
english, 2015