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Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias
Pooth, Alexander, Uren, Michael J., Cäsar, Markus, Martin, Trevor, Kuball, MartinVolume:
118
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4936780
Date:
December, 2015
File:
PDF, 929 KB
english, 2015