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3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator...

Materials Science Forum 2017 / 5 Vol. 897

3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode

Shima, Akio, Shimizu, Haruka, Mori, Yuki, Sagawa, Masakazu, Konishi, Kumiko, Fujita, Ryusei, Ishigaki, Takashi, Tega, Naoki, Kobayashi, Keisuke, Sato, Shintaroh, Shimamoto, Yasuhiro
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Volume:
897
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.897.493
Date:
May, 2017
File:
PDF, 967 KB
english, 2017
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