Improved Interface Trap Density Close to the Conduction...

Materials Science Forum 2017 / 5 Vol. 897

Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique

Rescher, Gerald, Pobegen, Gregor, Aichinger, Thomas, Grasser, Tibor
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Volume:
897
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.897.143
Date:
May, 2017
File:
PDF, 2.61 MB
english, 2017
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