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Study of SiO 2 /4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas
Chanthaphan, Atthawut, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, HeijiVolume:
5
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4930980
Date:
September, 2015
File:
PDF, 958 KB
english, 2015