Valence-band offsets in strained SiGeSn/Si layers with...

Semiconductors 2017 / 3 Vol. 51; Iss. 3

Valence-band offsets in strained SiGeSn/Si layers with different tin contents

Bloshkin, A. A., Yakimov, A. I., Timofeev, V. A., Tuktamyshev, A. R., Nikiforov, A. I., Murashov, V. V.
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Volume:
51
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782617030058
Date:
March, 2017
File:
PDF, 815 KB
english, 2017
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