Experimentally study electron overflow from quantum wells into p-side GaN and its effect on the efficiency droop in InGaN/GaN blue-light-emitting-diodes
Yan, Tongxing, Li, Junchao, Zhang, Jian, Li, Mo, Hu, XiaodongLanguage:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2017.01.049
Date:
May, 2017
File:
PDF, 694 KB
english, 2017