Effect of high-temperature annealing for single-Ni-layer...

Japanese Journal of Applied Physics 2016 / 05 Vol. 55; Iss. 5S

Effect of high-temperature annealing for single-Ni-layer gate in AlGaN/GaN high-electron-mobility transistors

Nanjo, Takuma, Imai, Akifumi, Kurahashi, Kenichiro, Matsuda, Takashi, Suita, Muneyoshi, Yagyu, Eiji
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Volume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.05FK05
Date:
May, 2016
File:
PDF, 1.41 MB
english, 2016
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