Electronic absorption of interstitial boron-related defects...

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physica status solidi (a) 2017 / 05

Electronic absorption of interstitial boron-related defects in silicon

Khirunenko, Lyudmila I., Sosnin, Mikhail G., Duvanskii, Andrei V., Abrosimov, Nikolai V., Riemann, Helge
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Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201700245
Date:
May, 2017
File:
PDF, 416 KB
english, 2017
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