Enhancement of resistive switching properties in nitride...

Applied Physics Letters 2017 / 05 Vol. 110; Iss. 20

Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al 2 O 3 thin layer

Kumar, Dayanand, Aluguri, Rakesh, Chand, Umesh, Tseng, Tseung-Yuen
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Volume:
110
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4983465
Date:
May, 2017
File:
PDF, 1.20 MB
english, 2017
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