Conductance Signal from Near-Interface Traps in n-Type...

Materials Science Forum 2017 / 5 Vol. 897

Conductance Signal from Near-Interface Traps in n-Type 4H-SiC MOS Capacitors under Strong Accumulation

Khosa, Rabia Y., Sveinbjörnsson, Einar Ö.
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Volume:
897
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.897.147
Date:
May, 2017
File:
PDF, 813 KB
english, 2017
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