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Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET
Okamoto, Mitsuo, Sometani, Mitsuru, Harada, Shinsuke, Yano, Hiroshi, Okumura, HajimeVolume:
897
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.897.549
Date:
May, 2017
File:
PDF, 391 KB
english, 2017