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Analysis of Interface Trap Density and Channel Mobility in 4H-SiC NMOS Capacitors and Lateral MOSFETs
Domeij, Martin, Franchi, Jimmy, Gumaelius, Krister, Lee, K., Allerstam, FredrikVolume:
897
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.897.115
Date:
May, 2017
File:
PDF, 982 KB
english, 2017