Vertical transport in isotype InAlN/GaN dipole induced...

Journal of Applied Physics 2017 / 05 Vol. 121; Iss. 20

Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy

Fireman, M. N., Li, Haoran, Keller, Stacia, Mishra, Umesh K., Speck, James S.
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Volume:
121
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4983767
Date:
May, 2017
File:
PDF, 2.13 MB
english, 2017
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