Achieving Low Recovery Time in AlGaN/GaN HEMTs with AlN Interlayer under Low Noise Amplifiers Operation
Huang, Tongde, Axelsson, Olle, Bergsten, Johan, Thorsell, Mattias, Rorsman, NiklasYear:
2017
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2017.2709751
File:
PDF, 1.49 MB
english, 2017