DC and microwave characteristics of 20 nm T-gate InAlN/GaN...

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Superlattices and Microstructures 2017 / 5

DC and microwave characteristics of 20 nm T-gate InAlN/GaN high electron mobility transistor for high power RF applications

Murugapandiyan, P., Ravimaran, S., William, J., Ajayan, J., Nirmal, D.
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Language:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2017.05.060
Date:
May, 2017
File:
PDF, 1.22 MB
english, 2017
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