Diamond field-effect transistors for RF power electronics:...

Japanese Journal of Applied Physics 2017 / 01 Vol. 56; Iss. 1S

Diamond field-effect transistors for RF power electronics: Novel NO 2 hole doping and low-temperature deposited Al 2 O 3 passivation

Kasu, Makoto
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Volume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.01AA01
Date:
January, 2017
File:
PDF, 4.85 MB
english, 2017
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