The influence of Al composition in AlGaN back barrier layer on leakage current and dynamic R ON characteristics of AlGaN/GaN HEMTs
He, Liang, Li, Liuan, Zheng, Yue, Yang, Fan, Shen, Zhen, Chen, Zijun, Wang, Wenjing, Zhang, Jialin, Zhang, Xiaorong, He, Lei, Wu, Zhisheng, Zhang, Baijun, Liu, YangLanguage:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201600824
Date:
June, 2017
File:
PDF, 1.39 MB
english, 2017