Effect of a halogen-based precursor on dopant incorporation...

Journal of Materials Science 2017 / 8 Vol. 52; Iss. 16

Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy

Negri, Marco, Bosi, Matteo, Orsi, Davide, Rimoldi, Tiziano, Attolini, Giovanni, Buffagni, Elisa, Ferrari, Claudio, Cristofolini, Luigi, Salviati, Giancarlo
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Volume:
52
Language:
english
Journal:
Journal of Materials Science
DOI:
10.1007/s10853-017-1164-9
Date:
August, 2017
File:
PDF, 805 KB
english, 2017
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