Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on CdxHg1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates
Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Varavin, V. S., Vasil’ev, V. V., Dvoretskii, S. A., Mikhailov, N. N., Yakushev, M. V., Sidorov, G. Yu.Volume:
60
Language:
english
Journal:
Russian Physics Journal
DOI:
10.1007/s11182-017-1083-x
Date:
June, 2017
File:
PDF, 344 KB
english, 2017