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The effects of process temperature on the work function modulation of ALD HfO 2 MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursor
Kim, Young Jin, Lim, Donghwan, Han, Hoon Hee, Sergeevich, Andrey Sokolov, Jeon, Yu-Rim, Lee, Jae Ho, Son, Seok Ki, Choi, ChanghwanVolume:
178
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2017.05.023
Date:
June, 2017
File:
PDF, 2.47 MB
english, 2017